Bandgap engineering of strained monolayer and bilayer MoS2.

By Hiram J Conley, Jed I. Ziegler, Richard F. Haglund Jr., S. Pantelides, K. Bolotin. Nano letters (Print), 2013

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We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ~45 meV/% strain for monolayer MoS2 and ~120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f21d0b4c08807be50a5b3301a7af1c3002ede817

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Citations in the corpus

Strain engineering of two‐dimensional materials: Methods, properties, and applications (2021, methodology): “Bolotin et al studied the evolution of Raman peaks of monolayer MoS2 under uniaxial strain and revealed that the A0 peak showed almost no shift in position, while the E0 peak split into E0+ and E0− due to the breaking of crystal symmetry (Figure 4(B)).(51) Berry et al carried out the Raman mapping o”
Few-layer MoS 2 saturable absorbers for short-pulse laser technology: current status and future perspectives [Invited] (2015, background): “Due to a large elastic strain that monolayers of the material can accommodate, bandgap engineering of MoS2 permits tailoring of its optical properties [114].”
Few-layer MoS2: a promising layered semiconductor. (2014, background): “A strain was found to cause a split in the E2g 1 peak of the Raman spectrum coupled with a shift in thePLandabsorbance spectrum (seeFigure4a,c,d) congruent with band gap change along with a large increase in PL intensity.(125,130) The impact of a strain on MoS2 FET devices has also been theoreticall”
A roadmap for electronic grade 2D materials (2019, background): “7 16938 [3] Conley H J et al 2013 Bandgap engineering of strained monolayer and bilayer MoS2 Nano Lett.”