Gate capacitance of back-gated nanowire field-effect transistors
By O. Wunnicke. 2006
261 citations recorded by the source corpus.
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the “metallic cylinder on an infinite metal plate model.” Completely embedded and nonembedded NW-FETs are considered. It is shown that the use of the analytical expressions also for nonembedded NW-FETs gives carrier mobilities that are nearly two times too small. Furthermore, the electric field amplification of nonembedded NW-FETs and the influence of the cross section shape of the nanowires are discussed.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f1f6b03aa10c76fb2559e4daf43e10131e018560
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In Biomedical Engineering
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Nanowires With Promise for Photovoltaics (2011, methodology): “in effective capacitance as compared to a wrap around gate [77].”
- Doping of semiconductor nanowires (2011, methodology): “However, many assumptions are made which lead to limitations of the described model, as discussed in detail by Wunnicke [120] and Khanal et al. [121].”