Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO

By Shengbai Zhang, Suhuai Wei, Alex Zunger. 2001

1,678 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f0acd22595bed5a261aad68feb12b3c8f705911b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Chunrui Wang
2. W. Park
3. G. Yi
4. K. Ellmer
5. L. Ng
6. C. Ong
7. A. Bikowski
8. A. Mohammad

In Materials Chemistry

1. Chunrui Wang
2. W. Park
3. G. Yi
4. K. Ellmer
5. L. Ng
6. C. Ong
7. A. Bikowski
8. A. Mohammad

Citations in the corpus

• A review of ZnO nanoparticles as solar photocatalysts: Synthesis, mechanisms and applications (2018, background): “[86] studied the intrinsic doping asymmetry of ZnO via microscopic equilibrium mechanism and revealed that n-type ZnO can be easily obtained via intrinsic or extrinsic dopants.”
• ZnO nanorods: synthesis, characterization and applications (2005, background): “Making p-type ZnO is more difficult, presumably due to high background n-type carrier concentration and self-compensation caused by easily formed donor defects [106, 107].”