Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
By Aubrey T. Hanbicki, O. V. Erve, R. Magno, G. Kioseoglou, C. H. Li, B. Jonker, G. Itskos, R. Mallory, M. Yasar, A. Petrou. 2003
300 citations recorded by the source corpus.
Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current–voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor.
Subfields: Atomic and Molecular Physics, and Optics
View Paper: https://www.semanticscholar.org/paper/ef50688ef5eeecf541ce9a4f4c1aae88c0a91eea
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In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Spin-polarised currents and magnetic domain walls (2005, background): “Several groups have recently demonstrated spin injection from metals 79–81 , ferromagnetic semiconductors 82–84 and tunnel and hot electron injectors 85–87 into a semiconductor by using a so-called spin-LED as a detector.”
- Spintronics: Fundamentals and applications (2004, unknown): “3, was used to show carrier polarization of Pn'30% using Fe as a spin injector (Hanbicki et al., 2003).”