Equilibrium limits of coherency in strained nanowire heterostructures

By E. Ertekin, P. Greaney, D. Chrzan, T. Sands. 2005

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Room-temperature lasing in a single nanowire with quantum dots (2015, unknown): “During the NW growth, the small diameter and a lateral relaxation of the strain allows for the coherent formation of lattice-mismatched heterostructures beyond the critical thickness allowed with planar architectures.[24,25] This should facilitate the realization of densely-packed, strain-relieved Q”
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “accommodate higher mismatch strains before misfit dislocations are formed [48].”
III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (2011, background): “calculated the diameter below which the NW is coherent (without misfit dislocation) and plastic (with misfit dislocations) growth [60], [61].”
Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “Nanowire heterojunctions can be highly lattice-mismatched as the induced strain can be coherently accommodated through lateral relaxation [27].”
III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “The critical thickness in both core–shell [119–125] and axial [126–130] nanowire heterostructures is larger than their thin film counterparts because strain can be relaxed elastically at the nanowire free surface.”