Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

By V. Brar, Yuanbo Zhang, Yossi Yayon, A. Bostwick, T. Ohta, J. McChesney, K. Horn, Eli Rotenberg, M. Crommie. 2007

222 citations recorded by the source corpus.

The authors present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows an ∼100meV gaplike feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are relevant for potential devices involving electronic transport or tunneling in graphene/SiC.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/eea6219436e1fe6ab352c62c7e958b072c91b404

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

  1. E. Hwang
  2. E. Rossi
  3. A. C. Castro Neto
  4. Francisco Guinea
  5. S. Adam
  6. A. Wee
  7. Xingyu Gao
  8. D. Qi

In Materials Chemistry

  1. E. Rossi
  2. E. Hwang
  3. S. Adam
  4. Francisco Guinea
  5. A. C. Castro Neto
  6. N. M. R. Peres
  7. Alessandra Lanzara
  8. K. Novoselov

Citations in the corpus