First-principles study of magnetization relaxation enhancement and spin transfer in thin magnetic films

By M. Zwierzycki, Y. Tserkovnyak, P. Kelly, A. Brataas, G. B. U. O. Twente, The Netherlands, Harvard University, Usa, Norwegian University of Science, Technology and 1 more. 2004

157 citations recorded by the source corpus.

The interface-induced magnetization damping of thin ferromagnetic films in contact with normal-metal layers is calculated from first principles for clean and disordered Fe/Au and Co/Cu interfaces. Interference effects arising from coherent scattering turn out to be very small, consistent with a very small magnetic coherence length. Because the mixing conductances which govern the spin transfer are to a good approximation real-valued, the spin pumping can be described by an increased Gilbert damping factor but an unmodified gyromagnetic ratio. The results also confirm that the spin-current-induced magnetization torque is an interface effect.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/ee59cf107db78e96c622bf449d190cc399c0111d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Y. Tserkovnyak
2. A. Brataas
3. G. Bauer
4. B. Halperin
5. Anders Eklund
6. Ahmad A. Awad
7. Ana Rusu
8. Johan Åkerman

In Electrical and Electronic Engineering

1. A. Brataas
2. G. Bauer
3. Y. Tserkovnyak

In Electronic, Optical and Magnetic Materials

1. B. Halperin
2. Y. Tserkovnyak
3. A. Brataas
4. G. Bauer

Citations in the corpus

• Nonlocal magnetization dynamics in ferromagnetic heterostructures (2004, methodology): “However, by first-principles scattering matrices based on realistic electronic structures computed in the local spin-density approximation, Zwierzycki et al., 2005 have shown that quantum-size oscillations are much smaller than those obtained by Mills, 2003, and small amounts of disorder suppress…”
• Spin-Torque and Spin-Hall Nano-Oscillators (2015, background): “While the perpendicular contribution is small for all-metallic multilayers [45]–[47], it can be substantial in devices with tunneling barriers [46], [48]–[50].”