Fe-implanted InGaAs terahertz emitters for 1.56μm wavelength excitation

By Masato Suzuki, Masayoshi Tonouchi. 2005

146 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ede23e458871b8f2c992ace9c4030559a55606ca

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Magda El-Shenawee
2. Mona Jarrahi
3. N. Burford
4. C. Berry

In Electrical and Electronic Engineering

1. Magda El-Shenawee
2. N. Burford
3. Mona Jarrahi
4. C. Berry

Citations in the corpus

• Terahertz generation using plasmonic photoconductive gratings (2012, background): “There have been extensive studies on various techniques to mitigate this challenge [17–19] and very promising solutions have been offered for reducing photoconductor dark current by embedding InGaAs between InAlAs trapping layers [10, 22].”
• Review of terahertz photoconductive antenna technology (2017, background): “57 ps in InGaAs PCA emitters due to Fe2þ implantation under identical operating conditions.(93) Additionally, InGaAs∶Fe2þ demonstrated higher optical pump saturation power as well Fig.”