Critical diameter for III-V nanowires grown on lattice-mismatched substrates

By Linus C. Chuang, M. Moewe, C. Chase, N. Kobayashi, Connie J. Chang-Hasnain, S. Crankshaw. 2007

235 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ed6517dc768f0e10d58ef450b64015c2c059d135

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1. K. Tomioka
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4. Takashi Fukui
5. K. Hiruma

Citations in the corpus

• III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (2011, background): “[26], [30], [38], [44], [45], [47], [48], [54], GaSb [57], and ternary-alloy [18], [21], [39], [40], [43], [57], [58] NWs on Si have been reported, and these NWs were grown by the VLS,”
• Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “Mismatch strain between the nanowire and the substrate can be coherently relieved through lateral relaxation [27] as long as the nanowire diameter is below a certain critical diameter [84].”