Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

By Byoung-Hun Lee, L. Kang, R. Nieh, W. Qi, Jack C. Lee. 2000

586 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ecee6bef8700ca2da65d6705f68e4a7af7b7b253

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1. M. Wingert
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Citations in the corpus

• Thermal transport in amorphous materials: a review (2016, background): “High-k amorphous zirconia (ZrO2) and hafnia (HfO2) have been proposed as promising alternatives for SiO2 to provide required capacitance with relatively large film thickness [22].”