Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon

By O. Nast, A. Hartmann. 2000

208 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ebbdb746067b91ffa98e1a0ca3d9df2364f33586