Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors

By Xiao-Liang Qi, Yong-Shi Wu, Shoucheng Zhang. 2005

576 citations recorded by the source corpus.

We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a ``holographic metal'' at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ebaec23b3a59d0ca6c6ddf5f309b93e5ef0e4b52

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The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. Nathan Goldman
  2. J. Dalibard
  3. Zhong Wang
  4. Di Xiao
  5. Shoucheng Zhang
  6. Q. Niu
  7. Xiao-Liang Qi
  8. M. Chang

In Materials Chemistry

  1. Nathan Goldman
  2. J. Dalibard
  3. Di Xiao
  4. Zhong Wang
  5. Shoucheng Zhang
  6. Q. Niu
  7. Xiao-Liang Qi
  8. Ze-Guo Chen

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