Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

By N. Wu, Qingchun Zhang, Chunxiang Zhu, C. C. Yeo, S. Whang, D. Chan, M. F. Li, B. Cho, A. Chin, D. Kwong and 3 more. 2004

149 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/eb97ff6a95ff741eae889bdab4bb4ad931bb47f5