Analysis and Simulation of Heterostructure Devices

By Vassil Palankovski, R. Quay. 2004

202 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/eb2781bc94e5b8cfd30be99f92245696d0f1ff1c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Stanislav Vitanov
2. Rüdiger Quay
3. Stephan Maroldt
4. Vassil Palankovski

In Electrical and Electronic Engineering

1. Stanislav Vitanov
2. Rüdiger Quay
3. Stephan Maroldt
4. Vassil Palankovski

Citations in the corpus

• High-temperature modeling of AlGaN/GaN HEMTs (2009, methodology): “The low-field mobility is modeled by an expression similar to that proposed by Caughey and Thomas [45,16]: lLI ¼ lmin þ l L lmin 1þ CI=Cref c0 : CI denotes the concentration of ionized impurities, lL is the mobility in undoped material, lmin is the mobility in highly doped material, limited by impur”