Tight-binding approach to uniaxial strain in graphene

By V. M. Pereira, A. C. Castro Neto, N. M. R. Peres. 2008

1,032 citations recorded by the source corpus.

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However, this gap is critical, requiring threshold deformations in excess of 20% and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations and the gap appears as a consequence of the merging of the two inequivalent Dirac points only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/eb1f01100be8de155a7194f20c7f09a8026112f1

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The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. N. M. R. Peres
  2. K. Novoselov
  3. Francisco Guinea
  4. E. Rossi
  5. E. Hwang
  6. A.K. Geim
  7. S. Adam
  8. A. C. Castro Neto

In Materials Chemistry

  1. N. M. R. Peres
  2. K. Novoselov
  3. Francisco Guinea
  4. E. Hwang
  5. E. Rossi
  6. A. C. Castro Neto
  7. A.K. Geim
  8. S. Adam

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