Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

By C. Kieninger, Y. Kutuvantavida, D. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. Kemal, M. Lauermann, Sebastian Randel, Wolfgang Freude and 2 more. Optica, 2017

154 citations recorded by the source corpus.

Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33=2300  pm/V achieved in a silicon-organic hybrid (SOH) Mach–Zehnder modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5-mm-long device amounts to 210 mV, leading to a voltage-length product of UπL=320  Vμm—the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140  mVpp. We expect that efficient high-speed EO modulators will not only have a major impact in the field of optical communications, but will also open new avenues towards ultrafast photonic-electronic signal processing.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/eaca22678aa86ed74b5da5fdde30efe0942e427b

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In Atomic and Molecular Physics, and Optics

  1. D. van Thourhout
  2. R. Baets
  3. Abdul Rahim
  4. Despoina Petousi
  5. Bart Kuyken
  6. Artur Hermans
  7. Benjamin Wohlfeil
  8. Wim Bogaerts

In Electrical and Electronic Engineering

  1. D. van Thourhout
  2. R. Baets
  3. Abdul Rahim
  4. Despoina Petousi
  5. Bart Kuyken
  6. Artur Hermans
  7. Benjamin Wohlfeil
  8. Wim Bogaerts

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