Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide

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Molecular dynamics simulation study of deformation mechanisms in 3C-SiC during nanometric cutting at elevated temperatures (2016, neutral): “4 bond order potential (ABOP) [12] and Tersoff potential [13].”
Growth of Epitaxial Graphene: Theory and Experiment (2014, result): “Different results were obtained in [331]: using a modified Tersoff potential [374] it was found that graphene formed after annealing to between 1200 and 1260 K even when a single Si layer was removed.”
Influence of microstructure on the cutting behaviour of silicon (2016, methodology): “Abbreviations: ABOP Analytical bond order potential BDT Brittle-ductile transition CMOS Complementary metal–oxide–semiconductor d Uncut chip thickness DXA Dislocation extraction algorithm Fx Tangential cutting force Fy Thrust force GB Grain boundary HPPT High pressure phase transformation MOSFET Met”
Diamond machining of silicon: A review of advances in molecular dynamics simulation (2015, neutral): “9 2005 ABOP: analytical bond order potential [120] (3 body potential function) Si and C”
Nanomanufacturing—Perspective and applications (2017, background): “For example, the Tersoff potential is suitable for studying the elastic property of Si, but it shows poor ability to reproduce the melting point [49,191].”