Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics

By J. Scott, M. Dawber. 2000

526 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e9263dee83e014dd9ffca8170c95a4456ae41714

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. K. Rabe
2. J. Scott
3. M. Dawber

In Electronic, Optical and Magnetic Materials

1. K. Rabe
2. J. Scott
3. M. Dawber
4. Ramamoorthy Ramesh

In Materials Chemistry

1. K. Rabe
2. J. Scott
3. M. Dawber
4. David F. Watson
5. J. Triscone
6. Ramamoorthy Ramesh

Citations in the corpus

• Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics (2019, background): “We notice that this is analogous to oxygen vacancies commonly observed in oxide perovskites [36-39].”
• Physics of thin-film ferroelectric oxides (2005, background): “Scott and Dawber (2000) have suggested that in thin films the vacancies can reach sufficiently high concentrations that they order themselves into planes in a similar way as occurs in Fe-doped bulk samples and on the surfaces of highly reduced specimens.”