Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

By B. Shin, Yu Zhu, N. Bojarczuk, S. Chey, Supratik Guha. 2012

317 citations recorded by the source corpus.

We have examined Cu2ZnSnSe4 (CZTSe) solar cells prepared by thermal co-evaporation on Mo-coated glass substrates followed by post-deposition annealing under Se ambient. We show that the control of an interfacial MoSe2 layer thickness and the introduction of an adequate Se partial pressure (PSe) during annealing are essential to achieve high efficiency CZTSe solar cells—a reverse correlation between device performance and MoSe2 thickness is observed, and insufficient PSe leads to the formation of defects within the bandgap as revealed by photoluminescence measurements. Using a TiN diffusion barrier, we demonstrate 8.9% efficiency CZTSe devices with a long lifetime of photo-generated carriers.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e906b32d27296c5888b7e1421a220d96fcb94af2

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In Electrical and Electronic Engineering

1. X. Hao
2. Martin A. Green
3. Fang-yang Liu
4. H. Cui
5. Yu Feng
6. G. Conibeer
7. Xiaolei Liu
8. David B. Mitzi

In Materials Chemistry

1. Martin A. Green
2. X. Hao
3. Fang-yang Liu
4. H. Cui
5. Yu Feng
6. G. Conibeer
7. Xiaolei Liu
8. David B. Mitzi

Citations in the corpus

• The current status and future prospects of kesterite solar cells: a brief review (2016, background): “A TiN barrier layer deposited at the Mo/CZTS interface allows for a good grain structure at a high annealing temperature of 570 °C, while keeping MoSe2 thickness within acceptable limits (<300 nm) [44].”