Magnetically engineered spintronic sensors and memory

By Stuart S. P. Parkin, Xin Jiang, C. Kaiser, A. Panchula, K. Roche, M. Samant. Proceedings of the IEEE, 2003

570 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e8c92fbe329446ab5773bce316d79d26c310d6c4

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In Atomic and Molecular Physics, and Optics

In Condensed Matter Physics

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers (2004, background): “gif" NDATA ITEM> ]> Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM”
Interface-Induced Phenomena in Magnetism (2016, unknown): “This discovery led quickly to applications in magnetic sensors and hard disk drive read heads [Daughton, 1999; Prinz, 1999; Parkin et al., 2003], many based on spin valve heterostructures [Dieny et al.”
Spintronics: Fundamentals and applications (2004, unknown): “Realization of a large room temperature GMR (Parkin et al., 1991a,b) enabled a quick transition from basic physics to commercial applications in magnetic recording (Parkin et al., 2003).”
Electrical Detection of Magnetization Dynamics via Spin Rectification Effects (2016, background): “The large MR ratio of MTJs allows the creation of non volatile, high endurance memories with fast random access making magnetic random access memory (MRAM) a good candidate for a ‘universal memory’ [73].”
Colloquium : Spintronics in graphene and other two-dimensional materials (2019, background): “All these approaches set the prospect of engineering vertical magnetoresistance in 2D-based junctions, which are the key elements within current memory architectures of magnetic random access memories (Parkin et al., 2003).”
Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP (2015, background): “Large magnetoresistance (MR) has been pursued in emerging materials, because of its significance of application in state-of-the-art information technologies [17]).”