Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

By Suhuai Wei, Shengbai Zhang. 2002

539 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e8587b6084cdb7104fbe63cb1205047f4b697064

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Csaba Szeles
2. Shyue Ping Ong
3. Gerbrand Ceder
4. Yifei Mo

In Materials Chemistry

1. Zhenbin Wang
2. J. McKittrick
3. Csaba Szeles
4. Shyue Ping Ong
5. Gerbrand Ceder

Citations in the corpus

• Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors (2004, background): “59 eV by first principles band structure calculations [6].”
• Mining Unexplored Chemistries for Phosphors for High-Color-Quality White-Light-Emitting Diodes (2018, methodology): “Defect formation energies were calculated using the formalism presented by Wei et al.(42):”