Kinetic equations for transport through single-molecule transistors

By Martin Leijnse, M. Wegewijs. 2008

133 citations recorded by the source corpus.

We present explicit kinetic equations for quantum transport through a general molecular quantum-dot, accounting for all contributions up to 4th order perturbation theory in the tunneling Hamiltonian and the complete molecular density matrix. Such a full treatment describes not only sequential, cotunneling and pair tunneling, but also contains terms contributing to renormalization of the molecular resonances as well as their broadening. Due to the latter all terms in the perturbation expansion are automatically well-defined for any set of system parameters, no divergences occur and no by-hand regularization is required. Additionally we show that, in contrast to 2nd order perturbation theory, in 4th order it is essential to account for quantum coherence between non-degenerate states, entering the theory through the non-diagonal elements of the density matrix. As a first application, we study a single-molecule transistor coupled to a localized vibrational mode (Anderson-Holstein model). We find that cotunneling-assisted sequential tunneling processes involving the vibration give rise to current peaks i.e. negative differential conductance in the Coulomb-blockade regime. Such peaks occur in the cross-over to strong electron-vibration coupling, where inelastic cotunneling competes with Franck-Condon suppressed sequential tunneling, and thereby indicate the strength of the electron-vibration coupling. The peaks depend sensitively on the coupling to a dissipative bath, thus providing also an experimental probe of the Q-factor of the vibrational motion.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e832420dab1f0af0d547fad5b1408f3af2aca1b8

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In Atomic and Molecular Physics, and Optics

  1. F. Evers
  2. J. V. van Ruitenbeek
  3. Richard Koryt'ar
  4. S. Tewari

In Electrical and Electronic Engineering

  1. F. Evers
  2. J. V. van Ruitenbeek
  3. Richard Koryt'ar
  4. S. Tewari

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