(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

By P. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. Saadi, A. Lindsay, E. O’Reilly. 2001

241 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e824e9d52488d93c3d687ad3574a624917f31f33

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Citations in the corpus

• A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers (2002, methodology): “These parameters, the position of the nitrogen level above the CBE 0.485 eV and the coupling between the -level and CBE 1.675 eV, were constrained by comparison to tight-binding supercell calculations [ 27 ], and then further refined by fitting the results to the interband transitions observed in mi”