The Future Of ZnO Light Emitters
By D. Look, B. Claflin, Ya. I. Alivov, Seong-Ju Park. 2004
469 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/e77ce640c2010bb67a8b009b5129da7ca882b2a2
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Recent Advances in ZnO-Based Light-Emitting Diodes (2010, background): “The high carrier concentration achieved by n- and p-type doping is ∼10(20) electrons · cm−3 and ∼10(19) holes · cm−3, respectively [12].”
- ZnS nanostructures: From synthesis to applications (2011, background): “On the other hand, naturally occurring oxide is usually a n-type semiconductor and that’s why the full potential of ZnO nanostructures in electronic devices has not been realized [307,383].”