Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study

By J. Knaup, P. Deák, T. Frauenheim, Á. Gali, Z. Hajnal, W. J. Choyke. 2005

151 citations recorded by the source corpus.

Subfields: Ceramics and Composites, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e75592892c9dda013d572cfe0b775f377acdbeb6