Transition-metal profiles in a multicrystalline silicon ingot

By D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano, L. J. Geerligs. 2005

210 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e648eec20ac70490aa2fab8e09586b07c68d38cb

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In Electrical and Electronic Engineering

1. Matthew D. Pickett
2. Tonio Buonassisi

Citations in the corpus

• Chemical natures and distributions of metal impurities in multicrystalline silicon materials (2005, background): “5.3.1. On the size and distribution of metal silicide nanoprecipitates In addition to structural defect density discussed in the previous section, at least three other crystal growth variables combine to determine the size and spatial distribution of metal silicide nanoprecipitates: (1) the cooling ”