Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

By M. Milojević, F. Aguirre-Tostado, C. Hinkle, Hyunchul Kim, E. Vogel, Jiyoung Kim, Robert M. Wallace. 2008

146 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Surfaces, Coatings and Films

View Paper: https://www.semanticscholar.org/paper/e5b594da6fc9023d5089ce9137f44781139f2c88