Search for spin gapless semiconductors: The case of inverse Heusler compounds

By S. Skaftouros, K. Özdoğan, E. Şaşıoğlu, I. Galanakis. 2012

189 citations recorded by the source corpus.

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover, these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e56aeb1ed82cf45023a72b189b7d0c8623d68892

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Jinlong Yang
2. Xingxing Li

In Materials Chemistry

1. Xingxing Li
2. Jinlong Yang

Citations in the corpus

• First principles design of spintronics materials (2016, background): “identified another five potential SGS materials by searching all the inverse Heusler alloys X2YZ where X = Sc, Ti, V, Cr or Mn, Z = Al, Si or As and Y is a transition metal ranging from Ti to Zn [117].”