Beam Switching Reflectarray Monolithically Integrated With RF MEMS Switches

By O. Bayraktar, O. Civi, Tayfun Akin. IEEE Transactions on Antennas and Propagation, 2012

155 citations recorded by the source corpus.

A reflectarray antenna monolithically integrated with 90 RF MEMS switches has been designed and fabricated to achieve switching of the main beam. Aperture coupled microstrip patch antenna (ACMPA) elements are used to form a 10 × 10 element reconfigurable reflectarray antenna operating at 26.5 GHz. The change in the progressive phase shift between the elements is obtained by adjusting the length of the open ended transmission lines in the elements with the RF MEMS switches. The reconfigurable reflectarray is monolithically fabricated with the RF MEMS switches in an area of 42.46 cm2 using an in-house surface micromachining and wafer bonding process. The measurement results show that the main beam can be switched between broadside and 40° in the H-plane at 26.5 GHz.

Subfields: Aerospace Engineering, Media Technology

View Paper: https://www.semanticscholar.org/paper/e3ecbfd9b08471ca8d5c903fb2f991118433faed

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Citations in the corpus

A 1-Bit $10 \times 10$ Reconfigurable Reflectarray Antenna: Design, Optimization, and Experiment (2016, methodology): “In [21], an RRA with 10× 10 elements was designed to switch between beams pointing at 0◦ or 40◦.”
Reconfigurable Reflectarrays and Array Lenses for Dynamic Antenna Beam Control: A Review (2013, methodology): “has also been also considered here, and a fully-operational monolithic MEMS RRA at 26 GHz was designed and fabricated [71], while cells using surface mount MEMS elements were also implemented [72].”
A Broadband High-Efficiency Reconfigurable Reflectarray Antenna Using Mechanically Rotational Elements (2017, methodology): “0 dB [5], [7], [8], [10], much higher than those for fixed phase reflectarray elements, and it may even go up to 3.”
Reconfigurable Folded Reflectarray Antenna Based Upon Liquid Crystal Technology (2015, background): “, phase shifters based on PIN diodes [3], varactor diodes [4] andMEMS devices [5], [6], or by directly controlling the resonances of patches with embedded RF components, e.”