Electronic properties of In2O3 surfaces
By A. Klein. 2000
145 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/e35d9527a9330b4bf7debd9ef391f18d27dd4469
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In Electrical and Electronic Engineering
In Materials Chemistry
In Polymers and Plastics
Citations in the corpus
- Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells (2004, background): “ITO front contacts are often sensitive to annealing treatment, an increase of the electron affinity from around 4 to 5 eV, caused by oxidation or a post-deposition treatment, results in a blocking contact.(27,28) By doping ITO with F, N.”