Oscillatory crossover from two-dimensional to three-dimensional topological insulators

By Chaoxing Liu, Haijun Zhang, Binghai Yan, Xiao-Liang Qi, T. Frauenheim, X. Dai, Z. Fang, Shoucheng Zhang. 2009

378 citations recorded by the source corpus.

We investigate the crossover regime from three-dimensional topological insulators ${\text{Bi}}_{2}{\text{Te}}_{3}$ and ${\text{Bi}}_{2}{\text{Se}}_{3}$ to two-dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and nontrivial two-dimensional behavior.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e2c0e7a0eefc50edc9c5f58f836b838af60bb72d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Hsin Lin
2. Arun Bansil
3. Tanmoy Das
4. Shoucheng Zhang
5. Xiao-Liang Qi
6. Ashvin Vishwanath
7. Y. Ando
8. J. Moore

In Materials Chemistry

1. Hsin Lin
2. Arun Bansil
3. Tanmoy Das
4. Shoucheng Zhang
5. Xiao-Liang Qi
6. Y. Ando
7. Ashvin Vishwanath
8. Liang Fu

Citations in the corpus

• Topological insulators and superconductors (2010, background): “Interestingly, in another family of QSH insulators, Bi2Se3 and Bi2Te3 thin films (Liu et al., 2010), the conditionGEGH 0 is also satisfied when magnetic impurities such as Cr or Fe are introduced into the system, but for a different physical reason.”
• Colloquium : Topological band theory (2016, background): “(Liu et al. 2010; Wada et al. 2011; Chuang et al. 2013; Singh et al. 2013; Lin, Markiewicz et al. 2010) The topological characteristics are sensitive to thickness, composition and strain, and are tunable by electrical gating.”