Thermoelectric power of bulk black-phosphorus
By E. Flores, J. Ares, A. Castellanos-Gómez, Mariam Barawi, I. Ferrer, C. S'anchez. 2014
139 citations recorded by the source corpus.
The potential of bulk black-phosphorus, a layered semiconducting material with a direct band gap of ∼0.3 eV, for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 ± 10 μV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40% while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work indicates the prospective use of black-phosphorus in thermoelectric applications such as thermal energy scavenging, which typically require devices with high performance at temperatures near room temperature.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/e279c65d7041a1f825f04e8cdac5e1e42d04aaea
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Strain effects on thermoelectric properties of two-dimensional materials (2015, background): “It was also found that the Seebeck coefficient of black phosphorus increases with temperature, which is attributed to the increase of the charge carrier density [139].”
- Recent advances in synthesis, properties, and applications of phosphorene (2017, background): “Recently, Flores et al.107 have been able to measure thermoelectric properties directly.”