Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures
By X. Dong, C. Adelmann, J. Q. Xie, C. Palmstrøm, X. Lou, J. Strand, P. Crowell, J. Barnes, A. Petford-Long. 2004
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Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-nAl0.1Ga0.9As∕GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2MnGe decays more rapidly with increasing temperature.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/e23cb8d41719ddf527a6baa4df869cb65a40f29e
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In Atomic and Molecular Physics, and Optics
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Spin-polarized light-emitting diodes and lasers (2007, methodology): “Co2MnGe GaAs QW 27%/2 K; 2%/280 K OHE [90]”