High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

By Xuan Luo, Y. Oh, A. Sirenko, P. Gao, T. Tyson, K. Char, S. Cheong. 2012

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We discovered that perovskite (Ba,La)SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of ∼8-10 × 1019 cm−3 is found to be ∼103 cm2 V−1 s−1 at room temperature, and the precise measurement of the band gap Δ of a BaSnO3 crystal shows Δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.

View Paper: https://www.semanticscholar.org/paper/e1d05193fd80b5f70db23dcec849c646d2052756