Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

By Y. Lee, Jaeyeong Heo, S. Siah, Jonathan P. Mailoa, R. Brandt, Sang Bok Kim, R. Gordon, Tonio Buonassisi. 2013

180 citations recorded by the source corpus.

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.

Subfields: Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/e1820bde0f05ec0e1da991be9f205dfe48b82f9b