Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells
By M. Bivour, J. Temmler, H. Steinkemper, M. Hermle. 2015
306 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e1746f8bcc5c82f2ff8c9f995b5d0b887d386f0e
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells (2016, background): “Multiple studies found that molybdenum oxide contacts on silicon degrade under annealing at 200◦C [8, 11] and atomic layer deposition of molybdenum oxide at higher temperature was also found to yield low quality contacts [17, 18].”
- Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, methodology): “These metal oxides have been used on the front side of a classical SHJ solar cell to replace the p -type a-Si:H layer [94], [97], [99], [101], [102], [104] or to improve the contact between the p -type a-Si:H layer and the TCO [102], [103], [105].”
- Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells (2017, background): “For example, as hole selective contacts, molybdenum oxide (MoOx) [10], vanadium oxide (VOx) [11,12], and tungsten oxide (WOx) [12,13], all with high work function, and nickel oxide (NiOx) [14] and PEDOT:PSS [poly(3,4ethylene-dioxythiophene):polystyrenesulfonate] [15] with a small valence band offset”