Graphene-based bipolar spin diode and spin transistor: Rectification and amplification of spin-polarized current

By M. Zeng, Lei Shen, Haibin Su, M. Zhou, Chun Zhang, Y. Feng. 2010

134 citations recorded by the source corpus.

A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly +-100% spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transport property is attributed to the intrinsic transmission selection rule of the spin subbands near the Fermi level in ZGNRs. The simultaneous control of spin current by the bias voltage and the magnetic configurations of the electrodes provides an opportunity to implement a whole range of spintronics devices. We propose theoretical designs for a complete set of basic spintronic devices, including bipolar spin diode, transistor and logic gates, based on ZGNRs.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e16f4e66eb9b45ec892e7dc16feabc9ffa4e04da

Citations in the corpus

• Edge Hydrogenation-Induced Spin-Filtering and Rectifying Behaviors in the Graphene Nanoribbon Heterojunctions (2011, unknown): “Recently, Zeng et al.11 proposed that a ZGNR-based device could be designed as [(1,0] magnetic configurations, namely, one electrode is magnetized while the other is nonmagnetic.”