Experimental Realization of an Intrinsic Magnetic Topological Insulator
By Y. Gong 龚, J. Guo 郭, Jiaheng 佳恒 Li 李, K. Zhu 朱, Menghan 孟涵 Liao 廖, X. Liu 刘, Q. Zhang 张, Lin 林 Gu 谷, L. Tang 唐, X. Feng 冯 and 14 more. Chinese Physics Letters, 2018
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An intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi2Te4, by alternate growth of a Bi2Te3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/e10501e7ce212646c67132904e19aef3eac5a8b5
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Citations in the corpus
- Magnetism, symmetry and spin transport in van der Waals layered systems (2021, unknown): “Over the past five years, magnetic orders have been discovered in several vdW material systems 1,14–18 .”
- Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and MnBi2nTe3n+1 (2019, background): “ield [16-21,23-39]. Theory has predicted several intrinsic antiferromagnetic (AF) TIs, such as MnBi 2Te 4 [16,19, 20, 21,40] and EuIn 2As 2 [17], while most experimental studies focused on MnBi 2Te 4 [18,21,25-27,30-39]. Very recently, a quantized Hall plateau at h/e2 was realized in few-layer MnBi ”
- Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi2Te4 (2019, background): “) [15, 16], exemplified by MnBi2Te4 [17–35], is established very recently to be stoichiometric TIs with an A-type AFM ground state.”