Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
By T. Chen, T. Chang, Tien-Yu Hsieh, Weifang Lu, Fu-Yen Jian, Chih-Tsung Tsai, Sheng-Yao Huang, Chia-Sheng Lin. 2011
150 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/e04f928b808900d9ec4d4561cffce2dea8d74be4