Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

By G. Kim, Woong Hee Jeong, B. Ahn, H. Shin, H. Kim, Hyun Jae Kim, M. Ryu, K. Park, Jong‐Baek Seon, Sangyoon Lee. 2010

147 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/def2e0555491e9b5b7e55c2f4cc5b453ea88c3a3

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In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

In Materials Chemistry

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

Citations in the corpus

• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, background): “Titanium [49, 50], aluminium [51, 52], tantalum [53], strontium [54], barium [54], scandium [55], magnesium [56], lanthanum [57], and gadolinium [58] exhibit similar carrier suppressor behavior in the IZO-based system, as shown in figure 4.”