Perovskite–fullerene hybrid materials suppress hysteresis in planar diodes

By Jixian Xu, A. Buin, Alexander H. Ip, Wei Li, O. Voznyy, R. Comin, M. Yuan, Seokmin Jeon, Zhijun Ning, Jeffrey J. McDowell and 8 more. Nature Communications, 2015

1,012 citations recorded by the source corpus.

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3− antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour. Metal halide perovskites are promising for solar energy harvesting, but currently prone to a large hysteresis and current instability. Here, Xu et al. show improvements in a hybrid material in which the fullerene is distributed at perovskite grain boundaries and thus passivates defects effectively.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/deda24ec9d201be8629948f88bdab8938b10b148

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In Electrical and Electronic Engineering

  1. Jinsong Huang
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  3. Yong-bo Yuan
  4. Yuchuan Shao
  5. Edward H. Sargent
  6. N. Park
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In Materials Chemistry

  1. Jinsong Huang
  2. Yang Yang
  3. Yong-bo Yuan
  4. Yuchuan Shao
  5. Edward H. Sargent
  6. M. McGehee
  7. N. Park
  8. H. Tan

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