Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
By E. Rashba. 2000
1,066 citations recorded by the source corpus.
Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the conductivities of a FM metal and a semiconductor microstructure. We also present explicit expressions for the spin-valve resistance of FM-T-N- and FM-T-N-T-FM-junctions with tunnel contacts at the interfaces and show that the resistance includes both positive and negative contributions (Kapitza resistance and injection conductivity, respectively).
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/ddcf588852ef1459e0ecb966372ab34e7ef8c15a
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In Atomic and Molecular Physics, and Optics
- Albert Fert
- Hideo Ohno
- M. E. Flatté
- David D. Awschalom
- Hector Ochoa
- I. Vera-Marun
- Ahmet Avsar
- J. V. Wees
In Electrical and Electronic Engineering
- Albert Fert
- M. E. Flatté
- David D. Awschalom
- Hideo Ohno
- I. Vera-Marun
- Hector Ochoa
- Ahmet Avsar
- J. V. Wees
Citations in the corpus
- Challenges for semiconductor spintronics (2007, background): “Inserting a spin-dependent interface resistance from a Schottky barrier or tunnel barrier resolves this proble”
- Nobel Lecture: Origin, development, and future of spintronics (2008, background): “…to introduce a discontinuity of the spin accumulation at the interface, increase the proportion of spin on the semiconductor side, and shift the depolarization from the metallic to the semiconductor side the same conclusions appear also in a paper by Rashba Rashba, 2000; Fert and Jaffrès, 2001 .”