Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

By Xiaojun Chen, Guillaume Perillat-Merceroz, D. Sam-giao, C. Durand, J. Eymery. 2010

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The shape of c-oriented GaN nanostructures is found to be directly related to the crystal polarity. As evidenced by convergent beam electron diffraction applied to GaN nanostructures grown by metal-organic vapor phase epitaxy on c-sapphire substrates: wires grown on nitridated sapphire have the N-polarity ([000math]) whereas pyramidal crystals have Ga-polarity ([0001]). In the case of homoepitaxy, the GaN wires can be directly selected using N-polar GaN freestanding substrates and exhibit good optical properties. A schematic representation of the kinetic Wulff's plot points out the effect of surface polarity.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dcd22e72bc17200d77a3dff3e3e9c79e3449f1c2