Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

By U. Karrer, Oliver Ambacher, M. Stutzmann. 2000

165 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/dc91452fecab9c2102d57098c83e769664aa5788

Citations in the corpus

• Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact (2010, unknown): “known to be difficult to achieve [199]–[203].”