Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration
By M. Tran, Duanni Huang, John E. Bowers. APL Photonics, 2019
212 citations recorded by the source corpus.
Narrow linewidth lasers have many applications, such as higher order coherent communications, optical sensing, and metrology. While semiconductor lasers are typically unsuitable for such applications due to relatively low coherence, recent advances in heterogeneous integration of III-V with silicon have shown that this is no longer true. In this tutorial, we discuss in-depth techniques that are used to drastically reduce the linewidth of a laser. The heterogeneous silicon-III/V platform can fully utilize these techniques, and fully integrated lasers with Lorentzian linewidth on the order of 100 Hz and tuning range of 120 nm are shown.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/dc1bda37182426dc77d8f53f8f97a0c2b274a0ff
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In Electrical and Electronic Engineering
- John E. Bowers
- A. Safavi-Naeini
- Mirko Lobino
- Volker J. Sorger
- Andrew M. Weiner
- Hong X. Tang
- Stephan Steinhauer
- Carsten Schuck
Citations in the corpus
- 2022 Roadmap on integrated quantum photonics (2021, background): “In both cases low-loss silicon waveguides reduce phase noise by 40 dB and enable linewidths in the range of 100 Hz while providing >100 nm of tuning range [84].”