Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

By H. Matsubara, T. Sasada, M. Takenaka, S. Takagi. 2008

297 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dba7ff76448b231f582de08da968fc97ade95286