Some effects of oxygen impurities on AlN and GaN

By G. A. Slack, L. Schowalter, D. Morelli, J. Freitas. 2002

338 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/db784af0167cf2c3df4d535c3aa2b1dae7794e9a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Akira Hirano
2. Yosuke Nagasawa

In Condensed Matter Physics

1. Akira Hirano
2. Stanislav Vitanov
3. Rüdiger Quay
4. Stephan Maroldt
5. Vassil Palankovski
6. Yosuke Nagasawa

In Electrical and Electronic Engineering

1. Stanislav Vitanov
2. Rüdiger Quay
3. Stephan Maroldt
4. Vassil Palankovski

Citations in the corpus

• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, background): “The problem in growing AlN substrates by physical vapor transport (PVT) [55], which is also referred to as sublimation [56,57], is absorption in the UV region due to carbon [58] and oxygen [59] impurities.”
• High-temperature modeling of AlGaN/GaN HEMTs (2009, methodology): “The parameter a, which models the decrease with temperature is calibrated against measured data [42–44].”