Effect of Substrate Roughness and Feedstock Concentration on Growth of Wafer-Scale Graphene at Atmospheric Pressure
By Zhengtang Luo, Yeh-Pei Lu, Daniel W. Singer, Matthew E. Berck, L. A. Somers, B. Goldsmith, A. T. Johnson. 2011
284 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/da2438a51f76780e9b484780277064438cfaacad
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- A. Castellanos-Gómez
- Xinliang Feng
In Materials Chemistry
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- A. Castellanos-Gómez
- Jonathan N. Coleman
- Andrea C. Ferrari
- Paolo Samorì
Citations in the corpus
- Large scale atmospheric pressure chemical vapor deposition of graphene (2013, background): “Quality of the CVD grown graphene is very much affected by the type and pretreatment of Cu catalyst foil [28,29] but not much details are given in the literature regarding its treatment prior to CVD.”
- Production and processing of graphene and related materials (2020, background): “The surface of the metal can be improved by electropolishing [769, 770, 786] Many experiments have been performed on Cu annealing [797, 798], heating the substrate to T above the melting point of Cu,[799, 800], Cu surface oxidation, [786, 790, 802], using Cu with controlled crystal orientation [786]”