Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

By Ki-Seung Lee, Seo-Won Lee, B. Min, Kyung-Jin Lee. 2012

359 citations recorded by the source corpus.

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/da14d3a12c9c1eb0d6c2a5626c7ec18d8ceac85a

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In Atomic and Molecular Physics, and Optics

1. Pietro Gambardella
2. J. Sinova
3. T. Jungwirth
4. A. Manchon
5. I. Miron
6. Kevin Garello
7. A. Thiaville
8. J. Železný

Citations in the corpus

• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, methodology): “This behavior was interpreted as a signature of incipient monodomain behavior, even though no precessional switching was observed, contrary to the prediction of macrospin models (Lee et al., 2013; Park et al., 2014).”
• Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance (2014, neutral): “[23] demonstrate such sensitivity in Fig.”