Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

By Yingchun Cheng, Z. Y. Zhu, W. Mi, Z. B. Guo, Udo Schwingenschlögl. 2013

471 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d9e7126823f0f0d4b30118447f1d13d9cb8ea018

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Long-qing Chen
2. Robert M. Wallace
3. Mauricio Terrones
4. G. Eda
5. John Robertson

In Materials Chemistry

1. Kai Xiao
2. Saptarshi Das
3. Long-qing Chen
4. Robert M. Wallace
5. Mauricio Terrones
6. G. Eda
7. Ingo Steinbach
8. Nele Moelans

Citations in the corpus

• Substitutional doping in 2D transition metal dichalcogenides (2020, background): “With increasing number of W as nearest neighbours around VSe, the energy difference between the defect states and the CBM can be systematically reduced [94] (Fig.”
• A roadmap for electronic grade 2D materials (2019, background): “[249] Cheng Y C, Zhu Z Y, Mi W B, Guo Z B and”